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| Photo transistors K DNH OESI ST-1MLA ST-1MLB DIMENSIONS The ST-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 Type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type devices. (Unit : mm) FEATURES UWide angular response URelatively low-cost against metal can package ULow profile package UTwo leads (Collector, Emitter) ST-1MLA UThree leads (Collector, Emitter, Base) ST-1MLB APPLICATIONS UOptical counters UInfrared sensors UCamera stroboscopes ST-1MLA ST-1MLB MAXIMUM RATINGS Item C-E voltage E-C voltage Collector current Collector power dissipation Operating temp. Storage Temp. *1 Soldering temp. (Ta=2...) 5 Symbol VCEO VECO C I PC Topr. Tstg. Tsol. Rating 40 4 30 100 -25~+90 -30~+100 260 Unit V V mA mW ... ... ... *1. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Collector dark current Light current C-E saturation voltage Rise time Switching speeds Fall time Spectral sensitivity Peak wavelength Half anglee (Ta=2...) 5 Symbol C I EO L I VCE(sat) tr tf *I *Ip *E Conditions VCEO=10V *2 VCE=10V, 200lx *2 C=2mA, 2,000lx I VCC=10V, C=5mA, I *y RL=100 Min. 0.5 Typ. 1 2.0 0.2 8 10 500~1,050 880 ae 0 7 Max. 200 5.0 0.4 Unit. nA mA V *Iec. s *Iec. s nm nm deg. *2. Color temp.=2856K standard Tungsten lamp - 1- Photo transistors ST-1MLA ST-1MLB Collector current Vs. Collector - Emitter voltage Collector current Vs. Illuminance Dark current Vs. Ambient temperature Relative sensitivity Vs. Wavelength Swithing time vs. Load resistance Radiant Pattern Collector power dissipation Vs. Ambient temperature - 2- |
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